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High Voltage Schottky and p-n Diodes
  • Level Professional
  • Duration 19 hours
  • Course by University of Colorado Boulder
  • Offered by

About

This course can also be taken for academic credit as ECEA 5722, part of CU Boulder’s Master of Science in Electrical Engineering. This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is the second course in the "Semiconductor Power Device" specialization that focusses on diodes, MOSFETs, IGBT but also covers legacy devices (BJTs, Thyristors and TRIACS) as well as state-of-the-art devices such as silicon carbide (SiC) Schottky diodes and MOSFETs as well as Gallium Nitride (GaN) HEMTs. The specialization provides an overview of devices, the physics background needed to understand the device operation, the construction of a device circuit model from a physical device model and a description of the device fabrication technology including packaging. This second course provides a more detailed description of high-voltage Schottky and p-n diodes, starting with the semiconductor physics background needed to analyze both types of diodes. The main properties of crystalline semiconductors are presented that lead to the calculation of carrier densities and carrier currents, resulting in the drift-diffusion model for the semiconductors of interest. Next are a close look at Schottky diodes followed by p-n diodes, with a focus on the key figures of merit including the on-resistance, breakdown voltage and diode capacitance. For each diode, the analysis is then linked to the corresponding SPICE model. Finally, the power diode losses - both on-state losses and switching losses - are examined in a convertor circuit, including a comparison of silicon p-n diodes and 4H-SiC Schottky diodes. Learning objectives: • Provide students with a detailed understanding of High-Voltage Schottky and p-n diodes. • Students will be able to calculate key diode parameters based on their physical structure. • Students will be able to construct SPICE models for Schottky and p-n diodes.

Modules

Introduction

    • 1 Readings
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1 Readings

  • Course syllabus

Semiconductor crystals

    • 1 Videos
    • 2 Readings
    • 1 Quiz
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1 Videos

  • 1.1 Semiconductor crystals

2 Readings

  • 1.1 Semiconductor Crystals
  • 1.1 Lecture slides

1 Quiz

  • 1.1 Semiconductor crystals

Energy bands in semiconductors

    • 1 Videos
    • 2 Readings
    • 1 Quiz
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1 Videos

  • 1.2 Energy bands

2 Readings

  • 1.2 Energy bands
  • 1.2 Lecture slides

1 Quiz

  • 1.2 Energy bands in semiconductors

Electron and hole densities

    • 1 Videos
    • 3 Readings
    • 1 Quiz
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1 Videos

  • 1.3 Electron and hole densities

3 Readings

  • 1.3 Electron and hole densities
  • 1.3 Lecture slides
  • 1.3 Examples

1 Quiz

  • 1.3 Electron and hole densities

Carrier transport

    • 1 Videos
    • 3 Readings
    • 1 Quiz
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1 Videos

  • 1.4 Carrier transport

3 Readings

  • 1.4 Carrier transport
  • 1.4 Lecture slides
  • 1.4 Examples

1 Quiz

  • 1.4 Carrier transport

Continuity equation

    • 1 Videos
    • 2 Readings
    • 1 Quiz
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1 Videos

  • 1.5 Continuity equation

2 Readings

  • 1.5 Carrier recombination and generation/Continuity equation
  • 1.5 Lecture slides

1 Quiz

  • 1.5 Continuity equation

Drift-diffusion model

    • 1 Videos
    • 2 Readings
    • 1 Quiz
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1 Videos

  • 1.6 Drift-diffusion model

2 Readings

  • 1.6 Continuity equation
  • 1.6 Lecture slides

1 Quiz

  • 1.6 Drift-diffusion model

Metal-semiconductor junctions

    • 1 Videos
    • 3 Readings
    • 1 Quiz
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1 Videos

  • 2.1 Metal-semiconductor junctions

3 Readings

  • 2.1 Structure and principle of operation
  • 2.1 Lecture slides
  • 2.1 Example

1 Quiz

  • 2.1 Metal-semiconductor junctions

Electrostatic analysis

    • 1 Videos
    • 3 Readings
    • 1 Quiz
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1 Videos

  • 2.2 Electrostatic analysis

3 Readings

  • 2.2 Electrostatic analysis
  • 2.2 Lecture slides
  • 2.2 Example

1 Quiz

  • 2.2 Electrostatic analysis

Schottky diode current

    • 1 Videos
    • 3 Readings
    • 1 Quiz
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1 Videos

  • 2.3 Schottky diode current

3 Readings

  • 2.3 Schottky diode current
  • 2.3 Lecture slides
  • 2.3 Examples

1 Quiz

  • 2.3 Schottky diode current

Schottky diode breakdown

    • 1 Videos
    • 3 Readings
    • 1 Quiz
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1 Videos

  • 2.4 Schottky diode breakdown

3 Readings

  • 2.4 Schottky diode breakdown
  • 2.4 Lecture slides
  • 2.4 Example

1 Quiz

  • 2.4 Schottky diode breakdown

SPICE model of a Schottky diode

    • 1 Videos
    • 2 Readings
    • 1 Quiz
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1 Videos

  • 2.5 Spice model of a Schottky diode

2 Readings

  • 2.5 Lecture slides
  • 2.5 Example

1 Quiz

  • 2.5 Schottky diode SPICE model

p-n diode structure

    • 1 Videos
    • 3 Readings
    • 1 Quiz
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1 Videos

  • 3.1 p-n Diode structure

3 Readings

  • 3.1 p-n diode structure
  • 3.1 Lecture slides
  • 3.1 Example

1 Quiz

  • 3.1 p-n diode structure

Electrostatic analysis

    • 1 Videos
    • 3 Readings
    • 1 Quiz
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1 Videos

  • 3.2 Electrostatic analysis

3 Readings

  • 3.2 Electrostatic analysis
  • 3.2 Lecture slides
  • 3.2 Examples

1 Quiz

  • 3.2 Electrostatic analysis

p-n diode current

    • 1 Videos
    • 3 Readings
    • 1 Quiz
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1 Videos

  • 3.3 p-n Diode current

3 Readings

  • 3.3 p-n Diode current
  • 3.3 Lecture slides
  • 3.3 Example

1 Quiz

  • 3.3 p-n diode current

Diffusion capacitance

    • 1 Videos
    • 3 Readings
    • 1 Quiz
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1 Videos

  • 3.4 Minority carrier storage - diffusion capacitance

3 Readings

  • 3.4 Diffusion capacitance
  • 3.4 Lecture slides
  • 3.4 Example

1 Quiz

  • 3.4 Diffusion capacitance

SPICE model of a p-n diode

    • 1 Videos
    • 2 Readings
    • 1 Quiz
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1 Videos

  • 3.5 SPICE model of a p-n diode

2 Readings

  • 3.5 Lecture slides
  • 3.5 Example

1 Quiz

  • 3.5 SPICE model

Diode resistance versus breakdown voltage

    • 1 Videos
    • 3 Readings
    • 1 Quiz
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1 Videos

  • 4.1 Diode resistance versus breakdown voltage

3 Readings

  • 4.1 Diode resistance versus breakdown voltage
  • 4.1 Lecture slides
  • 4.1 Example

1 Quiz

  • 4.1 Resistance versus breakdown voltage

Power diode losses in a boost convertor

    • 1 Videos
    • 2 Readings
    • 1 Quiz
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1 Videos

  • 4.2 Switching losses

2 Readings

  • Boost convertor tutorial
  • 4.2 Lecture slides

1 Quiz

  • 4.2 Power diode losses

Comparison of Schottky and p-n diodes

    • 1 Videos
    • 2 Readings
    • 1 Quiz
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1 Videos

  • 4.3 Comparison of Schottky and p-n diodes

2 Readings

  • 4.3 Comparison of Schottky and p-n diodes
  • 4.3 Lecture slides

1 Quiz

  • 4.3 4H-SiC Schottky vs silicon p-n diodes

Auto Summary

Discover the intricacies of high-voltage Schottky and p-n diodes with this advanced course, designed for first-year graduate students and professionals in the fields of engineering and science, particularly those with a keen interest in power electronics and semiconductor devices. As part of CU Boulder’s Master of Science in Electrical Engineering, this course is offered for academic credit under ECEA 5722 and is the second installment in the "Semiconductor Power Device" specialization. This comprehensive program delves into the physics and operation of diodes, MOSFETs, IGBTs, and both legacy and cutting-edge devices, including silicon carbide (SiC) Schottky diodes, MOSFETs, and Gallium Nitride (GaN) HEMTs. Participants will gain a thorough understanding of device physics, circuit model construction, and fabrication technology. The course provides a detailed exploration of high-voltage Schottky and p-n diodes, starting with the essential semiconductor physics required to analyze these devices. It covers the properties of crystalline semiconductors, leading to carrier density and current calculations and the drift-diffusion model. Focus then shifts to Schottky and p-n diodes, examining their key figures of merit such as on-resistance, breakdown voltage, and capacitance. Additionally, learners will link these analyses to corresponding SPICE models and evaluate power diode losses in converter circuits, comparing silicon p-n diodes with 4H-SiC Schottky diodes. Key learning objectives include: - Developing a deep understanding of high-voltage Schottky and p-n diodes. - Calculating key diode parameters based on physical structures. - Constructing SPICE models for Schottky and p-n diodes. With a duration of approximately 1140 minutes, the course offers flexible subscription options, including Starter and Professional levels, making it accessible for learners at different stages of their professional journey. Join this course on Coursera to enhance your expertise in semiconductor power devices and advance your career in electrical engineering.

Bart Van Zeghbroeck
Instructor

Bart Van Zeghbroeck